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HiBuS® Technology - UC Davis GS T, V DS < V GS-V T Inversion layer connects drain and source Current is almost linear with V (like a resistor) DS Channel is “pinched-off” Current saturates (becomes independent of VDS, to first order) = 0 Reverse-biased P-N junctions! Capacitance depends on reverse-bias voltage
AN-1001 - Mouser Electronics To measure Drain-Source leakage current of a MOSFET, at first, short Gate pin and Source pin, and then, apply maximum allowable voltage on Drain-Source and monitor the leakage current of Drain-Source
Lecture_5-trans-theory - University of Texas at Austin Application of a negative gate voltage (w r t source) draws holes into the region below the gate; channel changes from n to p-type (source-drain conduction path)
Power MOSFET Basics: Understanding Gate Charge and Using it . . . In the test set up, source inductance was kept to the minimum with good routing practices, and also a large value of Rgext was used for illustration purposes Therefore, source inductance drop and its influence on current rise and fall times are not significant
Gate-source voltage behaviour in a bridge - Rohm In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail