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Connection of body of nwell resistor in layout in cadence For a Triple-Well process there could be a PWELL-resistor in a NWELL In this case the body is the NWELL and should must be connected to a higher potential than any resistor terminal
Area-Efficient Embedded Resistor-Triggered SCR with High ESD . . . - MDPI An area-efficient embedded resistor-triggered silicon-controlled rectifier (ERTSCR) is proposed in this paper As verified in a 0 3-μm CMOS process, the proposed ERTSCR exhibits lower triggering voltage due to series diode chains and embedded deep n-well resistor in the trigger path
IC Layout Basics - AnalogHub Diffusion resistor - is a type of resistor which is formed in a diffusion area (as drain source areas), separated by the WELL Typically, the p^+ p+ diff resistor has a bit lower resistivity than n^+ n+
Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF . . . On the other hand, in 96V nLDMOS case, the vertical current flow occurs not only under the drain (NPNvd) but also under the source region (NPNvs), where the potential condition is N+source<P-RESURF<NBL This behavior can be explained with considering in-depth electrical potential profiles
Improved LDMOS‐SCR for high‐voltage electrostatic discharge (ESD . . . An improved lateral double-diffused MOS silicon-controlled rectifier (ILDMOS-SCR) for high-voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0 18 µm 5 V 24 V BCD process
MOS Transistor Modeling for HV Processes HV NMOS thin gate oxide output characteristic W L=40 3 VGS=1 4,2 3,3 2,4 1,5 V; += measurements, solid lines = BSIM4 The RS diffusion resistor and the RD well resistor may be external asymmetrical That means RS does not have to be equal to RD
Filename =“nmos_process Three types of CMOS processing: (a) nwell, (b) pwell, and (c ) twin nwell In complimentary MOS (CMOS) technology, both PMOS and NMOS devices are used Since the PMOS and NMOS devices require substrate material of opposite type of doping, at least two different CMOS technologies occur