|
- Band Structures of Transition-Metal-Dichalcogenide Layer Compounds
The results of these calculations confirm that the group- () and group- () compounds are semiconductors; the calculated indirect band gaps of 2 7 and 1 2 eV are in reasonable agreement with the observed values of 2 0 and 1 4 eV, respectively
- Band Structures of Transition-Metal-Dichalcogenide Layer Compounds
these calculations confirm that the group-IVB(1T-HfS,)and group-VIB(28-MoS )compounds are semiconductors; the calculated indirect band gapsof 2 7 and1 2 eV are in reasonable agreement with the observed valuesof 2 0and1 4eV, respectively
- (PDF) Complex band structures of transition metal dichalcogenide . . .
The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M =
- Optical and Electrical Properties of Transition Metal Dichalcogenides . . .
In this chapter, we discuss the electronic band structure, electrical, and optical properties of transition metal dichalcogenides The different crystallographic structures for transition metal dichalcogenides are presented along with a discussion of the chemical bonding
- Moire bands in transitional metal´ dichalcogenides: continuous Mott . . .
lattice of 3d, 4d or 5d transition metal sandwiched between two triangular layers of chalcogen atoms ( , Se, Te) The resulting layered structure has served for 6 decades as excellent model compounds of 2D materials In the 1960's and 70's, TMDs were intensively stud
- Electronic structure and band theory of transition metal . . .
The band structures of many of the layer compounds are presented and reviewed Discussions are presented on the role of self-consistency and other factors which influence the reliability of the calculations
- Band Structures of Transition-Metal-Dichalcogenide Layer Compounds
The nonrelativistic augmented-plane-wave (APW) method is applied to calculate the electronic band structures of several transition-metal-dichalcogenide (TX 2) layer compounds, including materials with the C 6 (1T-HfS 2,1T-TaS 2), C 27 (2H-TaS 2,2H-NbSe 2), and C 7 (2H-MoS 2) structure types
- Gate-Tunable Band Edge in Few-Layer MoS2 | Nano Letters
Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations In monolayers, the conduction band minima are centered at the K points, whereas in multilayers, they shift to the Q points, midway between the Γ and K points In this study, we conduct
|
|
|