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- Strain for CMOS performance Improvement - IEEE
Device Improvement with strain engineering is considered a way to enhance the carrier mobility Several stress-transfer techniques (such as etch-stop liner, stress transfer technique, e-SiGe) using extra integration process into an existing baseline process is demonstrated
- Carrier mobility in advanced CMOS devices with metal gate and HfO
In this work, we have investigated in some details the electrical performance of advanced CMOS devices with metal gate and HfO 2 gate dielectrics with equivalent oxide thickness (EOT) down to 1 35 nm
- Mobility Characterization in Advanced FD-SOI CMOS Devices
To this end, emphasis has been particularly put in the past years in transport improvement, aiming at enhancing the carrier mobility for gain in Ion, with no loss neither in leakage current nor load capacitance
- What Is Carrier Mobility Modeling in Advanced CMOS Nodes?
This article delves into the intricacies of carrier mobility modeling, its implications for device performance, and the challenges faced in the context of advanced CMOS technologies
- Improved CMOS Performance via Enhanced Carrier Mobility
One approach is to increase the free carrier mobility in the active region of the device Here we discuss several different ways of accomplishing this The mobility of electrons and holes in a semiconductor derives from the band structure of the material
- Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process . . .
In this study, we demonstrate how to utilize process-induced strain, a common technique extensively applied in the semiconductor industry, to enhance the carrier mobility in 2D material transistors
- (PDF) Mobility Enhancement Technology for Scaling of CMOS Devices . . .
Innovative technologies such as metal gate high-k dielectric integration, source drain engineering, mobility enhancement technology, new device architectures, and enhanced quasiballistic
- Device structures and carrier transport properties of advanced CMOS . . .
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III–V materials are reviewed
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