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- Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics - Wiley Online Library
This study presents new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors
- Graphene–Silicon Hybrid MOSFET Integrated Circuits for High-Linearity Analog Amplification
To overcome the nonlinear distortion inherent in analog ICs based on Si-MOSFETs, we report here the graphene-silicon hybrid analog amplifier ICs that integrate graphene field-effect transistor (GFET) and Si-MOSFET components
- Recent developments in graphene based field effect transistors
This paper presents a comprehensive survey on the recent developments in Graphene Field Effect Transistor (G-FET), considering various aspects such as fabrication, modelling and simulation tools and applications especially in sensors, highlighting the future directions
- Reconfigurable frequency multipliers based on graphene field-effect transistors | Discover Nano - Springer
We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier The study is based on a physically based numerical simulator validated and tested against experiments
- Recent advances in graphene transistors modeling towards analog RF applications
This project is co- nanced by the European Union Regional Development Fund within the framework of the ERDF Operational Program of Catalonia 2014-2020 with the support of the Department de Recerca i Universitat, with a grant of 50% of total cost eligible GraphCAT project reference: 001-P-001702
- DOI: 10 - arXiv. org
Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology However, low on off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications Here we report a graphene MoTe2 van der Waals (vdW) vertical
- Triple-mode graphene transistors go analog - EE Times
Rice University researchers have demonstrated analog graphene transistors that can amplify like p-type and n-type silicon transistors, and also exploit the ambipolar ability of graphene in a novel frequency-multiplication mode
- Study the impact of graphene channel over conventional silicon on DC analog and RF performance of DG dual-material-gate VTFET - ScienceDirect
In this paper, our work focuses on combining the Graphene channel material instead of the Silicon channel, with a vertical tunnel FET structure along with dual material gate engineering TFET to increase the performance on DC, analog, and RF applications
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