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- BJT、JFET、MOS管，最基础的3种三极管。在原理上，他们的共性是什么，个性又是什么？ - 知乎
BJT的关键变量是Vbe、Vce、Ic，JFET与MOS管的关键变量都是Vgs、Vds、Id。 由这些具体可以概括出： 三极管需要处理的变量都是3个，即控制量、主通道电压、主通道电流。 做数据拟合的时候，3个变量的关系是很难处理的，都会想办法先踢掉一个，简化为2个变量的关系。
- BJT三极管，原理实质上真的是电流控制器件吗？总感觉其实是电压控制的。？ - 知乎
都2022年了，「BJT三极管是电流控制器件」的观点，还在流行。 不仅掩盖了三极管有趣的灵魂，还遮蔽了半导体中磅礴的力量。
- 现在大部分电路都使用 MOSFET，为什么还要学 BJT？ - 知乎
BJT作为输出级时，只要将BJT接成射极跟随器（共集电极组态），单管就很容易做到100欧姆以下的输出电阻，如果是大电流功率输出级，由于电导调制效应的作用，发射结电阻极低，很容易做到几个欧姆甚至更低的输出电阻，而且大电流输出时发射结电容几乎被
- BJT与MOSFET的开关速度谁更快？高频特性谁更好？ - 知乎
BJT的载流子（电子和空穴）在体内运动，迁移速度快，而MOSFET作为表面器件，载流子（多数载流子）在表面沟道中运动，迁移速度相对较慢。 "BJT的Base很窄，重掺杂的emiiter的多子可以很快的越过Base在Collector进行复合，即BJT具有较快的速度。
- 3-stage BJT amplifier - All About Circuits
I'm trying to build a 3-stage BJT amplifier to amplify the signal from an electret microphone and drive a 3W, 8Ω speaker I'm kinda stuck and need some help My idea is to use the first two stages as common-base amplifiers, each with a gain of around 15 5 The mic outputs about 20 mV, and I
- BJT LTSpice Gummel-poon Model - All About Circuits
Perhaps the following can help? (Sorry for the long reply) Recently, I have created a new model for a classical gain stage with a bipolar transistor (BJT, npn only) This model can be used to simulate all the important BJT properties (V-I characteristics) as well as the voltage gain of the complete circuit (with without DC or signal feedback and with without a capacitively connected external
- BJT Q-Point - All About Circuits
What's magical about 10 V? Just because it is half of Vcc? Remember what the Q-point is It is the DC operating point of the circuit with no signal applied You calculated that directly by using the nominal current gain of the transistor If you are wanting to use intersecting lines on the load-line to find the Q-point, then what you need to plot are the voltage-current lines for the same two
- Collector Base Junction controlling reverse or forward bias
Im missing a concept regarding saturation, active mode of a npn transistor for a bjt npn to be in saturation mode the collector base junction is forward biased and the base emitter junction is forward biased If you look at the bjt as a diode model you see that the collector base
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